近年、エネルギー効率を改善するための「グリーン」テクノロジーに対する関心が急増し、システムにおける効率改善・コスト削減のためのIC開発の重要性が増しています。DB HiTek は「グリーン」テクノロジーを実現すべく、卓越したアナログプロセス技術をもとに LED Driver、Motor Driver、DC-DC Converter、Power Management IC、Class D Amplifier などの様々なアナログ半導体を生産しており、特に低電力・高電圧製品用のプロセス開発に力をいれています。
当社は現在 0.35µm BCDMOSの開発、生産を行っています、また2008年に半導体業界で当社が初めて開発した 0.18µm BCDMOSプロセスにおきましても生産をすでに開始しており、これらの高度な開発、生産経験をもとに開発されたUHV700Vプロセスにおきましてもお客様への提供をも開始しております、当社はこれらの洗練された技術をもとに「グリーン」テクノロジーの拡大を推進してまいります。
0.13μm 40V BCDMOS
- 1.5V/5V CMOS with up to 8Metal available
- Industry-leading HS NLDMOS and PLDMOS up to 40V
- Implementation of fully Isolated devices are available
- Embedded NVM available
0.13μm 120V BCDMOS
- 1.5V/5V CMOS with up to 8Metal available
- Industry-leading HS NLDMOS and PLDMOS up to 120V
- Implementation of fully Isolated devices is available
- Embedded NVM available
0.18μm 35V BCDMOS(0.15um BEOL)
- 1.8V/5V CMOS with up to 6Metal available
- Industry-leading HS NLDMOS up to 35V, LS NLDMOS and PLDMOS up to 40V
- Implementation of fully Isolated devices is available
- Embedded NVM available
0.18μm 45V BCDMOS
- 5V and 6V CMOS available with up to 6Metal available
- 5V CMOS with gate OX TDDB to be guaranteed up to 6V
- Wide SOA and very low Rsp performance HS LDMOS and PLDMOS up to 45V
- Implementation of fully Isolated devices is available
0.18μm 60V BCDMOS
- 1.8V, 5V, and 6V CMOS with up to 6Metal available
- 5V CMOS with gate OX TDDB to be guaranteed up to 6V
- Industry-leading NLDMOS and PLDMOS up to 60V
- Implementation of fully Isolated devices is available
- Embedded NVM available
0.18μm 120V BCDMOS
- 1.8V, 5V, and 6V CMOS with up to 6Metal available
- 5V CMOS with gate OX TDDB to be guaranteed up to 6V
- Industry-leading HS NLDMOS and PLDMOS up to 120V
- Implementation of fully Isolated devices is available
- Embedded NVM available
0.35μm UHV 700V Non-epi process
- 7.5V CMOS with Isolation
- Up to 30V Asymmetric Drain-extended CMOS (DECMOS)
- Various LDMOS voltage rating (200V to 700V)
- Supports the JFET integrated LDMOS for highly optimized chip design
- Supports the UHV-resistor for BoM cost reduced design
- Supports the 1P1M design for cost-effective product design (11-mask layers)
0.35μm UHV 900V epi-process
- Supports applications with up to 900V breakdown voltage and especially suitable in the gate driver applications
- 5V/7V CMOS and up to 30V HV-CMOS
- 150V to 900V LDMOS
- Supports the built-in bootstrap diode for the high side gate driving