DB HiTek offers high voltage CMOS process technologies that support both flat-panel display and non-display products. Our LCD Driver IC (LDI) line, which converts digital data into image signals, serves an indispensable role in driving LCD and Plasma flat panel displays. We provide a customized process for each LDI depending on the size of the flat-panel it will be used with, from small (for mobile devices) to large (for tablets, computer screens, and TVs).
0.35um HVCMOS Process for LDI Gate Driver IC
- 0.35µm 1P2M Process for LDI Gate Driver IC
. LV: 2.0~5V, HV: 40V/45V
. Top metal option : M2~M3, up to M3
- LOCOS / Dual Gate Oxide / Retrograde Twin Well Process
- Low Vgs 45V N/PMOS (Sym, Asym) devices are available
- Top Thick Metal is available for low Rsh
- ESD MOS and Diode are available
0.11um HVCMOS Process for LDI Source Driver IC
- 0.11µm 1P4M Process for LDI Source Driver IC
. LV: 1.2V, MV: 4.5V, HV: 9V
. Top metal option : M4~M5, up to M5
- STI / Dual Gate Oxide / Twin Well Process
- 1.2V LV for High Speed and Low Power Consumption
- Top Thick Metal is available for low Rsh
- Competitive Number of Masks with Simplified Process
0.16um HVCMOS Process for LDI Source Driver IC
- 0.16µm 1P4M Process for LDI Source Driver IC
. LV: 1.8V, MV: 4.5V, 7V, 9V, HV: 9V, 13.5V, 18V
. Top metal : M4
- STI / Dual Gate Oxide / Twin Well Process (Optionally Triple Well for ISO HVN)
- Half VDD devices are available for low power consumption
- Top Thick Metal is available for low Rsh
- Competitive Number of Masks with Simplified Process
0.11um HVCMOS Process for LDI Mobile Driver IC
- 0.11µm 1P4M Process for LDI Mobile Driver IC
. LV: 1.2/1.5V, MV: 5.5V, HV: 30V
. Top metal option : M4~M5, up to M5
- STI / Triple Gate Oxide / Triple Well Process
- Low Leakage SRAM and Low VT N/P MOS for high speed interface as options are available
- Competitive Number of Masks with Simplified Process
- OPT(EEPROM Type) and SRAM bit cell are available
0.16um HVCMOS Process for LDI Mobile Driver IC
- 0.16µm 1P4M Process for LDI Mobile Driver IC
. LV: 1.8V, MV: 6V, HV: 32V
. Top metal option : M4~M5, up to M5
- STI / Triple Gate Oxide / Triple Well Process
- ISO LV and MV Devices are available
- Higher MV and HV are available for higher display performance
- Competitive Number of Masks with Simplified Process
- OPT(EEPROM Type) and SRAM bit cell are available