As the demand for “green” energy-efficient products continues to grow, so also does the need for more energy-efficient ICs that can be manufactured at a lower cost than their power hungry predecessors. Toward serving this need, we have applied our extensive analog and mixed-signal technology expertise to develop a broad range of specialty chips such as LED driver, DC-DC converter, power management and class D amplifier devices. Our current product development focuses on meeting the most demanding low-power and high-voltage specifications.
We take great pride in having introduced the industry’s first 0.18um BCDMOS process in 2008 as an adjunct to our popular 0.35um BCDMOS process. We have demonstrated our industry leadership more recently by introducing a best-in-class Ultra High Voltage 700V BCD technology, which is now supporting development of energy-efficient products operating at high voltages.
0.13μm 40V BCDMOS
- 1.5V/5V CMOS with up to 8Metal available
- Industry-leading HS NLDMOS and PLDMOS up to 40V
- Implementation of fully Isolated devices are available
- Embedded NVM available
0.13μm 120V BCDMOS
- 1.5V/5V CMOS with up to 8Metal available
- Industry-leading HS NLDMOS and PLDMOS up to 120V
- Implementation of fully Isolated devices is available
- Embedded NVM available
0.18μm 35V BCDMOS(0.15um BEOL)
- 1.8V/5V CMOS with up to 6Metal available
- Industry-leading HS NLDMOS up to 35V, LS NLDMOS and PLDMOS up to 40V
- Implementation of fully Isolated devices is available
- Embedded NVM available
0.18μm 45V BCDMOS
- 5V and 6V CMOS available with up to 6Metal available
- 5V CMOS with gate OX TDDB to be guaranteed up to 6V
- Wide SOA and very low Rsp performance HS LDMOS and PLDMOS up to 45V
- Implementation of fully Isolated devices is available
0.18μm 60V BCDMOS
- 1.8V, 5V, and 6V CMOS with up to 6Metal available
- 5V CMOS with gate OX TDDB to be guaranteed up to 6V
- Industry-leading NLDMOS and PLDMOS up to 60V
- Implementation of fully Isolated devices is available
- Embedded NVM available
0.18μm 120V BCDMOS
- 1.8V, 5V, and 6V CMOS with up to 6Metal available
- 5V CMOS with gate OX TDDB to be guaranteed up to 6V
- Industry-leading HS NLDMOS and PLDMOS up to 120V
- Implementation of fully Isolated devices is available
- Embedded NVM available
0.35μm UHV 700V Non-epi process
- 7.5V CMOS with Isolation
- Up to 30V Asymmetric Drain-extended CMOS (DECMOS)
- Various LDMOS voltage rating (200V to 700V)
- Supports the JFET integrated LDMOS for highly optimized chip design
- Supports the UHV-resistor for BoM cost reduced design
- Supports the 1P1M design for cost-effective product design (11-mask layers)
0.35μm UHV 900V epi-process
- Supports applications with up to 900V breakdown voltage and especially suitable in the gate driver applications
- 5V/7V CMOS and up to 30V HV-CMOS
- 150V to 900V LDMOS
- Supports the built-in bootstrap diode for the high side gate driving